Radiative Heater

High temperature and better heating homogeneity; Continual rotating pssibility, suitable for large scale wafer.

Compatibe with Pulsed Laser Deposition System, Sputtering System, E-beam Evaporation System, etc.

Heating temperature: up to 1000°C

Wafer size: up to 8 inch

Heating stability: ±1°C

Ramp rate: 10°C/min