The high-power pulse laser generated by the pulse laser is focused on the surface of the target material, which will generate high-temperature and high-pressure plasma in the form of plume with directional localization motion to the substrate. When it touches the substrate heated to a certain growth temperature, a thin film is deposited.
The growth method is simple, the growth parameters are independently adjustable, the deposition efficiency is high, and the relative cost is low (one laser can be used by a plurality of vacuum systems, A vacuum system may simultaneously deposit a plurality of films).
Preparation of thin film by the pulse laser is carried out in a vacuum system, when the incident laser energy density reaches to ablate all elements in the target, i.e. higher than a certain threshold value, the constituent elements in the target have the same escape rate in theory. Therefore, the non-equilibrium growth can be realized and the composition of the target and the film can be consistent, which is the critical advantage of the PLD method compared with others.
As the laser energy is highly concentrated, it is beneficial to solve the related problems of the preparation of the thin film of the refractory material, and can be used for growing a high-quality multifunctional thin films, as well as to solve the problem of thin film preparation of the refractory material.
The temperature requirement for the substrate is low, and the texture film and the epitaxial single crystal film with consistent orientation can be realized, and in-situ growth at the lower temperature.
A laser can match a plurality of vacuum deposition chambers, a deposition chamber is provided with a plurality of target devices, the target can be flexibly changed, and the growth of the multi-layer film, the heterogeneous film and the superlattice film can be realized, and the prepared thin film can generate an atomic level clear interface.
Different kinds of process gases can be introduced, such as O2, N2, and it has obvious advantages in the preparation of the multi-element compound (mainly the multi-element oxide) thin film and the doping.
Almost all of the solid-state compounds such ashigh-temperature thin film, diamond-like thin film, ferroelectric thin film, superlattice, biological ceramic coating.
